|
Compact
radio frequency Sputtering System RFS-200
|
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|
| Features |
| 1. |
It is compact, easy to
move. (gas cylinder can be placed in the unit) |
| 2. |
Target electrode diameter,
80mm, cooling type. Substrate holder diameter 80mm,
Cu-made heating type. |
| 3. |
A high speed pumping. |
| 4. |
An introducing gas can
be minutely regulated by a flow control valve. |
| 5. |
It is usable for 100V
power source, 15A. |
| 6. |
Sputtering speed, 20nm/min.
(SiO2 ) |
| 7. |
It can be used for pre-sputtering. |
|
|
| Standard
target |
Dia.80 1 ~ 5t |
| Vacuum chamber |
200mm (W) X 250mm (D) X150mm
(H) / SUS-304 Front door |
| Substrate
electrode |
Dia.80mm Cu attached heating
system |
| Target electrode |
Dia.80mm Cu Water cooling |
| Shutter |
Dia.95mm X 1 Manual |
| RF power
supply |
200W 13.56MHz |
| Power supply
for substrate heating |
Digital controller Max 350
degrees(C) |
| Vacuum system |
Oil diffusion pump 21/2",
240L/sec.
Oil-sealed pump G-100D 100L/min. |
| Dimensions,
Weight |
800mm (W) X630mm (D) X1625.5mm
(H) /200kg |
| Power requirement |
Single phase 100V 1.3kW |
| Power requirement
for RF |
Single phase 100V 0.5kW |
| Cooling water
requirement |
200kPa, 5 L/min below 20 degrees(C) |
| Optional
parts |
LN cold trap, Magnetron, Substrate
heating 650 degrees(C) , Additional inlet gas-line,
ionization vacuum gauge, Ar gas bottle, In-line trap
(OMI-100) |
|
top of page
| Ultimate
pressure |
6.7
X 10-4 Pa |
| Evacuation
time |
5min.
unit 10-3 order |
| Sputtering
pressure |
10-1 Pa
(at Ar) |
| Target |
Conductor |
Al • Cu • Au • Cr
etc. |
| Semiconductor |
Si • Ge • Se
etc. |
| Nonconductor |
SiO2 • Al2O3 etc. |
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